ITO/homoepitaxial ZnSe/ITO MSM sensors with thermal annealing

IEEE Sensors Journal

Volumn 6, Issue 4, 2006, Pages 945-948

  Chang, S J ^b   Lin, T K ^b   Su, Y K ^a,b   Chiou, Y Z ^c   Wang, C K ^b   Chang, S P ^b   Chang, C M ^b   Tang, J J ^c   Huang, B R ^d  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Homoepitaxial; Indium tin oxide (ITO); Metal semiconductor metal (MSM) sensor; Molecular beam epitaxy (MBE); ZnSe

Indexed keywords

HOMOEPITAXIAL; INDIUM-TIN-OXIDE (ITO); METAL-SEMICONDUCTOR-METAL (MSM) SENSOR; SCHOTTKYBARRIER; ZNSE;

ACOUSTIC NOISE; INDIUM; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TIN;

ANNEALING;

EID: 33746932155     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2006.877938     Document Type: Article

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