Patterned heteroepitaxial processing applied to ZnSe and ZnS 0.02Se 0.98 on GaAs (001)

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3912-3917

  Zhang, X G ^a   Rodriguez, A ^a   Li, P ^a   Jain, F C ^a   Ayers, J E ^a  

^a University of Connecticut   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; BASIC MECHANISM; DISLOCATION MOTION; GAAS; GAAS(001); HETEROEPITAXIAL; HETEROEPITAXIAL LAYERS; LATERAL FORCE; LINE TENSION; TEMPERATURE DEPENDENCE; THERMALLY ACTIVATED; THREADING DISLOCATION;

ACTIVATION ENERGY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; LATTICE MISMATCH; ZINC SULFIDE;

SEMICONDUCTING GALLIUM;

EID: 0037087466     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1446227     Document Type: Article

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