|
|
Volumn 46, Issue 6, 1999, Pages 1127-1134
|
|
Cryogenic processed metal-semiconductor-metal (MSM) photodetectors on MBE grown ZnSe
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CRYOGENICS;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRODES;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
POLYIMIDES;
SEMICONDUCTING GALLIUM ARSENIDE;
SILICA;
SUBSTRATES;
TEMPERATURE;
THIN FILMS;
ZINC COMPOUNDS;
INTERDIGITATED METAL FINGERS;
METAL SEMICONDUCTOR METAL PHOTODETECTORS;
MULTILAYER RESIST PROCESS;
SPECIAL LOW TEMPERATURE LIFT OFF PROCESS;
SPECTRAL RESPONSIVITY;
PHOTODETECTORS;
|
|
EID: 0032637533
PISSN: 00189383
EISSN: None
Source Type: Journal
DOI: 10.1109/16.766874 Document Type: Article |
|
Times cited : (23)
|
|
References (16)
|
