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Journal of Crystal Growth

Volumn 243, Issue 3-4, 2002, Pages 389-395

Strain effect in ZnSe epilayers grown on GaAs substrates

(7) Yu, Y M a Nam, S a Byungsung O, a Lee, K S a Yu, P Y b Lee, Jongwon c Choi, Y D d

a Chungnam National University (South Korea)

b Sunchon National University (South Korea)

c Hanbat National University (South Korea)

d Mokwon University (South Korea)

Author keywords

A1 Strain; A1. Photoluminescence; A1. Raman scattering; A3. Hot wall epitaxy; B1. Zinc compounds

Indexed keywords

LATTICE CONSTANTS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STRAIN; X RAY DIFFRACTION ANALYSIS;

HOT WALL EPITAXY;

EPITAXIAL GROWTH;

EID: 0036725199 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01541-5 Document Type: Article

Times cited : (8)

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