Design and demonstration of novel QW intermixing scheme for the integration of UTC-type photodiodes with QW-B ased components

IEEE Journal of Quantum Electronics

Volumn 42, Issue 2, 2006, Pages 171-181

  Raring, James W ^a   Skogen, Erik J ^b   Wang, Chad S ^a   Barton, Jonathon S ^a   Morrison, Gordon B ^c   Demiguel, Stephane ^d   DenBaars, Steven P ^a   Coldren, Larry A ^a  

^a University of California   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c ThreeFive Photonics ^*  (Netherlands)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Electro absorption modulators; Metal organic chemical vapor deposition (MOCVD); Monolithic integration; Quantum well intermixing (QWI); Semiconductor lasers; Semiconductor optical amplifier (SOA); Unitraveling carrier (UTC) photodiodes

Indexed keywords

METALORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATION; QUANTUM WELL INTERMIXING; QUANTUM-WELL INTERMIXING (QWI); UNI-TRAVELING CARRIERS; UNITRAVELING CARRIER (UTC) PHOTODIODES;

ABSORPTION; DEMONSTRATIONS; DESIGN; FABRICATION; INDUSTRIAL CHEMICALS; LASERS; LIGHT MODULATORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIXING; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; ORGANIC LASERS; PHOTODIODES; POWER ELECTRONICS; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTOR DIODES; SEMICONDUCTOR OPTICAL AMPLIFIERS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 33746918243     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.862030     Document Type: Article

References (18)

1. S. Srivastava and K. P. Roenker, "Numerical modeling study of the InP/InGaAs unitraveling-carrier photodiode," Solid State Electron., vol.48, pp. 461-470, 2004.
2. S. Demiguel, L. Giraudet, L. Joulaud, J. Decobert, F. Blache, V. Coupe, F. Jorge, P. Pagnod-Rosiaux, E. Boucherez, and F. Devaux, "Evanescently coupled photodiodes integrating a double stage taper for 40 Gb/s applications-Compared performance with side-illuminated photodiodes," J. Lightw. Technol., vol.20, no.12, pp. 2004-2014, Dec. 2002.
3. T. Ishibashi, T. Furuta, H. Fushimi, and H. Ito, "Photoresponse characteristics of unitraveling-carrier photodiodes," Proc. SPIE, vol.4283, pp. 469-479, 2001.
4. D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, and K. J. Williams, "High-saturation current wide bandwidth photodetectors," IEEE J. Sel. Topics Quantum Electron., no.4, pp. 702-708, Jul./Aug. 2004.
5. J. W. Shi, Y. S. Yu, C. Y. Wu, P. H. Chiu, and C. C. Hong, "Highspeed, high-responsivity, and high-power performance of near ballistic unitraveling-carrier photodiode at 1.55 μ wavelength," IEEE Photon. Technol. Lett., vol.17, no.9, pp. 1929-1931, Sep. 2005.
6. T. Yoshimatsu, S. Kodama, K. Yoshino, and H. Ito, "100 Gbit/s error-free retiming operation of monolithic optical gate integrating with photodiode and electroabsorption modulator," Electron. Lett., vol.40, no.10, pp. 626-628, 2004.
7. M. Sysak, J. Barton, L. Johansson, J. Raring, E. Skogen, M. Mašanović, D. Blumenthal, and L. Coldren, "Single chip wavelength conversion using a photocurrent driven (PD) EA modulator integrated with a widely tunable sampled grating DBR (SGDBR) laser," IEEE Photon. Technol. Lett., vol.16, no.9, pp. 2093-2095, Sep. 2004.
8. K. Morito, S. Tanaka, S. Tomabechi, and A. Kuramata, "A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure," presented at the Semicond. Opt. Amp. Applicat. Meeting. PD I-I, San Francisco, CA, Jun. 30, 2004.
9. J. Raring, E. Skogen, L. Johansson, M. Sysak, J. Barton, M. L. Mašanović, and L. Coldren, "Quantum, well intermixing for monolithic integration: A demonstration of novel, widely tunable 10 Gb/s transmitters and wavelength converters," presented at the Integrated Photonics Research Conf., San Francisco, CA, 2004, Paper IWC3.
10. J. Binsma, P. Thijs, T. VanDongen, E. Jansen, A. Staring, G. VanDenHoven, and L. Tiemeijer, "Characterization of butt-joint InGaAsP waveguides and their application to 1310 nm DBR-type MQW Ganin-clamped semiconductor optical amplifiers," IEICE Trans. Electron., vol.E80-C, pp. 675-681, 1997.
11. M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, "InGaAs/InGaAsP MQW electroabsorption mofulator integrated with a DFB laser fabricated by bandgap energy control, selective area MOCVD," IEEE J. Quantum Electron., vol.29, no.6, pp. 2088-2096, Jun. 1993.
12. E. Skogen, J. Raring, J. Barton, S. DenBaars, and L. Coldren, "Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators," IEEE J. Sel. Topics Quantum Electron., vol.9, no.5, pp. 1183-1190, Sep./Oct. 2003.
13. J. Raring, E. Skogen, S. Denbaars, and L. Coldren, "A study of regrowth interface and material quality for a novel InP based architecture," J. Cryst. Growth, vol.273, no.1-2, pp. 26-37, Dec. 2004.
14. J. Raring, E. Skogen, L. Johansson, M. Sysak, S. Denbaars, and L. Coldren, "Widely tunable negative-chirp SG-DBR laser/EA-modulated transmitter," J. Lightw. Technol., vol.23, no.1, p. 80-86, Jan. 2005.
15. T. Ishibashi, T. Furuta, H. Fushimi, S. Kodama, H. Ito, T. Nagatsuma, N. Shimizu, and Y. Miyamoto, "InP/InGaAs unitraveling-carrier photodiodes," IEICE Trans. Elekctron., vol.E83-C, no.6, Jun. 2000.
16. N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "Electron diffusivity in p-InGaAs determined from the pulse response of InP/InGaAs unitraveling-carrier photodiodes," Appl. Phys. Lett., vol.76, no.9, pp. 1191-1193, Feb. 2000.
17. Y. Muramoto, K. Kato, M. Mitsuhara, O. Nakajima, Y. Matsuoka, N. Shimizu, and T. Ishibashi, "High-output, high, speed, high efficiency unitraveling-carrierwaveguide photodiode," IEE Electron. Lett. ,vol. 34, no.1, pp. 122-123, 1998. (Pubitemid 128552035)
18. Y. Muramoto and T. Ishibashi, "InP/InGaAs pin photodiode structure maximizing bandwidth and efficiency," IEE Electron. Lett., vol.39, no.24, pp. 1749-1750, 2003.