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Volumn 48, Issue 3, 2004, Pages 461-470

Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode

Author keywords

InGaAs; InP; Photodiode

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; OPTICAL FIBERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0344898410     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.08.004     Document Type: Article
Times cited : (35)

References (8)
  • 3
    • 0032666653 scopus 로고    scopus 로고
    • Ultrawide-band/high-frequency photodetectors
    • Kato K. Ultrawide-band/high-frequency photodetectors. IEEE Trans. Microwave Theory Tech. 47(7):1999;1265-1281.
    • (1999) IEEE Trans. Microwave Theory Tech. , vol.47 , Issue.7 , pp. 1265-1281
    • Kato, K.1
  • 4
    • 0344595804 scopus 로고    scopus 로고
    • ATLAS, Silvaco International, San Jose, CA, 2000
    • ATLAS, Silvaco International, San Jose, CA, 2000.
  • 5
    • 0343345675 scopus 로고    scopus 로고
    • Implications of hole versus electron transport properties for high speed pnp heterojunction bipolar transistors
    • Datta S., Roenker K.P., Cahay M.M., Stanchina W.E. Implications of hole versus electron transport properties for high speed pnp heterojunction bipolar transistors. Solid State Electron. 43(1):1999;73-79.
    • (1999) Solid State Electron. , vol.43 , Issue.1 , pp. 73-79
    • Datta, S.1    Roenker, K.P.2    Cahay, M.M.3    Stanchina, W.E.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.