Electron diffusivity in p-InGaAs determined from the pulse response of InP/InGaAs uni-traveling-carrier photodiodes

Applied Physics Letters

Volumn 76, Issue 9, 2000, Pages 1191-1193

  Shimizu, Naofumi ^a   Watanabe, Noriyuki ^b   Furuta, Tomofumi ^b   Ishibashi, Tadao ^b  

^a NTT Network Innovation Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000438343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125979     Document Type: Article

References (9)

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