Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending

Physica Status Solidi C: Conferences

Volumn 2, Issue 6, 2005, Pages 1998-2003

  Idrissi, H ^a   Regula, G ^a   Lancin, M ^a   Douin, J ^b   Pichaud, B ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEFORMATION; ETCHING; STRESS ANALYSIS;

CANTILEVER BENDING; CANTILEVER MODES; DOUBLE STACKING FAULTS (DSF); STRESS EXPONENTS;

SILICON CARBIDE;

EID: 27444438670     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460544     Document Type: Conference Paper

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