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Volumn 100, Issue 2, 2006, Pages

Three-dimensional morphology evolution of SiO 2 patterned films under MeV ion irradiation

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC DEFORMATION; ION IRRADIATION; SIO 2 PATTERNED FILMS;

EID: 33746820546     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2215269     Document Type: Article
Times cited : (26)

References (33)
  • 22
    • 33746789226 scopus 로고    scopus 로고
    • TGZ11 from Mikromasch, Inc.
    • TGZ11 from Mikromasch, Inc.
  • 23
    • 84858933412 scopus 로고    scopus 로고
    • http://rsb.info.nih.gov/ij/download.html
  • 27
    • 33746803958 scopus 로고    scopus 로고
    • Hence the trace of D is zero
    • Hence the trace of D is zero.
  • 28
    • 33646561375 scopus 로고    scopus 로고
    • ABAQUS, Inc., Pawtucket, RI
    • ABAQUS, Abaqus 6.4 Theory Manual (ABAQUS, Inc., Pawtucket, RI, 2004).
    • (2004) Abaqus 6.4 Theory Manual
  • 29
    • 33746806086 scopus 로고    scopus 로고
    • note
    • 2, to the center of the spot. Matching an experimental profile from the center of the spot with the simulation, we find a value for A. This value of A is used to estimate the fluence for individual images in Fig. 2 by matching profiles, thereby providing the lateral ion distribution profile. This profile is integrated to find the resulting fluence, and then the entire profile is renormalized so that the integrated fluence matches the measured value.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.