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Volumn 88, Issue 1, 2000, Pages 59-64

Origin of MeV ion irradiation-induced stress changes in SiO2

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[No Author keywords available]

Indexed keywords


EID: 0002027998     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373624     Document Type: Article
Times cited : (76)

References (22)
  • 12
    • 0004207223 scopus 로고
    • Springer, New York
    • 11 Pa, H. Scholze, Glass (Springer, New York, 1991).
    • (1991) Glass
    • Scholze, H.1
  • 13
    • 49849113126 scopus 로고
    • OX is known to vary by less than 5% due to irradiation, R. Brückner, J. Non-Cryst. Solids 5, 123 (1970).
    • (1970) J. Non-cryst. Solids , vol.5 , pp. 123
    • Brückner, R.1
  • 14
    • 85037499263 scopus 로고    scopus 로고
    • note
    • Note that these stress measurements are only sensitive probes of the in-plane strain or density in the film. For a given structural configuration the out-of-plane elastic strain is related to the in-plane strain by the Poisson ratio. In addition, due to the structural transformation, the out-of-plane density will decrease.
  • 17
    • 85037516303 scopus 로고    scopus 로고
    • note
    • 3, C = 1.25 kl/mol K, H. Scholze, in Ref. 12.
  • 22
    • 85037509548 scopus 로고    scopus 로고
    • Masters thesis, Utrecht University (FOM-Institute for Atomic and Molecular Physics, Amsterdam)
    • T. van Dillen, Masters thesis, Utrecht University (FOM-Institute for Atomic and Molecular Physics, Amsterdam, 1999).
    • (1999)
    • Van Dillen, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.