Mechanisms for the activation of ion-implanted Fe in InP

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Cesca, T ^a   Verna, A ^a   Mattei, G ^a   Gasparotto, A ^a   Fraboni, B ^b   Impellizzeri, G ^c   Priolo, F ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HIGH TEMPERATURE EFFECTS; IRON; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

DEEP TRAP ACTIVATION PROPERTIES; DOPING DENSITY; HIGH TEMPERATURE FE-IMPLANTED INP;

ION IMPLANTATION;

EID: 33746811746     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2220000     Document Type: Article

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