High Fe2+/3+ trap concentration in heavily compensated implanted InP

Applied Physics A: Materials Science and Processing

Volumn 73, Issue 1, 2001, Pages 35-38

  Fraboni, B ^a   Gasparotto, A ^b   Priolo, F ^c   Scamarcio, G ^d  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d UNIVERSITY OF BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRON TRAPS; IRON; SOLUBILITY; SPECTROSCOPIC ANALYSIS;

PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS); TRAP CONCENTERATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0034964292     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100864     Document Type: Article

References (13)