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Volumn 87, Issue 25, 2005, Pages 1-3

Electrical activation of the Fe2+/3+ trap in Fe-implanted InP

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; FERMI LEVEL; ION IMPLANTATION; IRON; SEMICONDUCTOR DOPING;

EID: 29144519372     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150281     Document Type: Article
Times cited : (10)

References (12)
  • 1
    • 0002372939 scopus 로고
    • edited by S.Pantelides (Gordon and Breach, New York
    • S. G. Bishop, in Deep Centers in Semiconductors, edited by, S. Pantelides, (Gordon and Breach, New York, 1986), p. 541.
    • (1986) Deep Centers in Semiconductors , pp. 541
    • Bishop, S.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.