Hydrogen plasma etching mechanism on (0 0 1) diamond

Journal of Crystal Growth

Volumn 293, Issue 2, 2006, Pages 311-317

  Ri, Sung Gi ^a,b   Watanabe, Hideyuki ^a,b   Ogura, Masahiko ^a,b   Takeuchi, Daisuke ^a,b   Yamasaki, Satoshi ^a,b   Okushi, Hideyo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Atomic force microscopy; A1. Etching; A1. Low CH4 H2 ratio growth; A1. Misorientation angle; A3. Chemical vapor deposition processes; B1. Diamond

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ETCHING; MATHEMATICAL MODELS; PLASMA APPLICATIONS;

HYDROGEN PLASMA ETCHING; LOW CH4/H2 RATIO GROWTH; MECHANICAL POLISHING; MISORIENTATION ANGLES;

DIAMONDS;

EID: 33746599047     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.036     Document Type: Article

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