Local structural characterization of epitaxial a-plane InGaN/GaN thin films by transmission electron microscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1738-1741

  Yamazaki, T ^a   Kusakabe, K ^a   Nakanishi, N ^a   Ohkawa, K ^a,b   Hashimoto, I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION PATTERNS; GROWTH ORIENTATIONS; INGAN THIN FILM; 68.37.LP; 68.55.JK; 81.05.EA; 81.15.GH; GROWTH DIRECTIONS; SELECTED AREA DIFFRACTION PATTERNS; STRUCTURAL CHARACTERIZATION;

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; GALLIUM NITRIDE; LATTICE CONSTANTS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTING SAMARIUM COMPOUNDS; THIN FILMS;

THIN FILMS; FILM GROWTH;

EID: 33746383278     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565468     Document Type: Conference Paper

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