Carrier dynamics of optical emission from two-dimensional electron gas in undoped AlGaN/GaN single heterojunctions

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2109-2112

  Kwack, H S ^a   Cho, Y H ^a   Kim, G H ^b   Park, M R ^c   Youn, D H ^c   Bae, S B ^c   Lee, K S ^c   Lee, J H ^d  

^a Chungbuk National University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DYNAMICS; CARRIER RECOMBINATION; EMISSION ENERGY; PL SPECTROSCOPY; 73.20.AT; 77.65.-J; 78.55.CR; 78.60.HK; 78.66.FD;

GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION; ELECTRON GAS; INTERFACE STATES; LASER RADIATION; SEMICONDUCTOR QUANTUM WELLS; TWO DIMENSIONAL;

ELECTRON GAS; GALLIUM NITRIDE;

EID: 33746373816     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565288     Document Type: Conference Paper

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