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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2346-2349

Analysis of buffer-trapping effects on current collapse of GaN FETs

(3) Horio, K a Takayanagi, H a Nakano, H a

a SHIBAURA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OFF-STATE DRAIN VOLTAGE; SEMI-INSULATING BUFFER LAYER; TRANSIENT SIMULATION; TRAPPING EFFECTS; 71.55.EQ; 72.20.JV; 85.30.DE; 85.30.TV; BUFFER-TRAPPING EFFECTS; SEMI-INSULATING BUFFER; TRANSIENT CHARACTERISTIC; TWO-DIMENSIONAL TRANSIENT SIMULATION;

COMPUTER SIMULATION; DENSITY (SPECIFIC GRAVITY); ELECTRIC POTENTIAL; GALLIUM NITRIDE; INSULATING MATERIALS; BUFFER LAYERS; ELECTRIC CURRENT MEASUREMENT; FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE;

EID: 33746362594 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565108 Document Type: Conference Paper

Times cited : (3)

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