Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate

Electronics Letters

Volumn 42, Issue 15, 2006, Pages 884-886

  Liu, Y ^a   Egawa, T ^a   Jiang, H ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GALLIUM NITRIDE; HETEROJUNCTIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

DRAIN CURRENT; SAPPHIRE SUBSTRATES; SOURCE-DRAIN VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746353045     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061150     Document Type: Article

References (11)

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