Low-temperature metalorganic chemical vapor deposition of luminescent manganese-doped aluminum nitride films

Applied Physics Letters

Volumn 87, Issue 2, 2005, Pages

  Sato, A ^a   Azumada, K ^a   Atsumori, T ^a   Hara, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE FILMS; CONTROLLED LUMINESCENCE; EMISSION INTENSITY; EXCITATION MECHANISM;

CATHODOLUMINESCENCE; DOPING (ADDITIVES); ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; GLASS; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; THIN FILMS;

ALUMINUM NITRIDE;

EID: 24144435348     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1992669     Document Type: Article

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