Optical characterization of the internal electric field distribution under bias of CdZnTe radiation detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3115, Issue , 1997, Pages 62-68

  Yao, H Walter ^a   Anderson, Richard J ^a   James, Ralph B ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

CdZnTe room temperature radiation detectors; Internal electric field distribution; Optical Characterization; Pockels electro optic effect

Indexed keywords

BAND STRUCTURE; BIREFRINGENCE; CHARACTERIZATION; CHARGE COUPLED DEVICES; ELECTRIC FIELDS; ELECTROOPTICAL EFFECTS; IMAGE SENSORS; LIGHT POLARIZATION; LIGHT REFLECTION; LIGHTING; PHOTONS; SEMICONDUCTING CADMIUM TELLURIDE; SINGLE CRYSTALS;

OPTICAL CHARACTERIZATION;

RADIATION DETECTORS;

EID: 0031288887     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.277705     Document Type: Conference Paper

References (4)

1. Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias