Microphotoluminescence mapping on CdZnTe: Zn distribution

Journal of Applied Physics

Volumn 90, Issue 1, 2001, Pages 260-264

  Li, Z F ^a   Lu, W ^a   Huang, G S ^a   Yang, J R ^a   He, L ^a   Shen, S C ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035395420     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1378062     Document Type: Article

References (8)

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2. C. D. Maxey, J. E. Gower, P. Capper, E. S. O'Keefe, T. Skauli, and C. K. Ard, J. Cryst. Growth 197, 427 (1999).
3. C. I. Rablau, S. D. Setzler, L. E. Halliburton, N. C. Giles, and F. P. Doty, J. Electron. Mater. 27, 813 (1998).
4. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties (Springer, Berlin, 1996), p. 6.
5. S. C. Shen, Optical Properties of Semiconductors (Scientic, Beijing, 1992), p. 312.
6. C. F. Klingshirn, Semiconductor Optics (Springer, Berlin, 1997), p. 158.
7. D. J. Olego, J. P. Faurie, S. Sivananthan, and P. M. Raccah, Appl. Phys. Lett. 47, 1172 (1985).
8. g(CdTe)= 1.494 eV is the fitting result from our measurement.