Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1487-1490

  De Antonis, P ^a   Morton, E J ^a   Podd, F J W ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CRYSTALS; ELECTRIC FIELD MEASUREMENT; ELECTROOPTICAL EFFECTS; INFRARED RADIATION; LIGHT EMITTING DIODES; OPTICAL MICROSCOPY; OPTICAL SENSORS; PHASE MEASUREMENT; REFRACTIVE INDEX; SEMICONDUCTOR LASERS;

CADMIUM ZINC TELLURIDE; ELECTRIC FIELD INTENSITY; GERMANIUM DETECTORS; POCKELS EFFECTS;

RADIATION DETECTORS;

EID: 0030165410     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507089     Document Type: Article

References (7)

1. L.Chibani, M.Hage-Ali, P.Siffert, "Electrical Properties of detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPRM", 9th International Workshop on Room Temperature Semiconductors, Grenoble, 1995.
2. Properties of Narrow Gap Cadmium based compounds, Edited by Peter Capper, INSPEC, IEE, London, 1994, pp. 453.
3. R.Guenther, Modern Optics, John Wiley & Sons, Inc. 1990, pp. 569-589.
4. Properties of Narrow Gap Cadmium based compounds, Edited by Peter Capper, INSPEC, IEE, London, 1994, pp. 455.
5. S.M. Sze, Physics of Semiconductor Devices, Wiley, Inc. 1981, pp. 248-250.
6. P. De Antonis, E.J. Morton, T.Menezes, "Measuring the bulk resistivity of CdZnTe single crystal detectors using a contactless alternating electric field method", 9th International Workshop on Room Temperature Semiconductors, Grenoble, 1995.
7. M. Hage-Ali, P. Siffert, ''Status of Semi-insulating cadmium telluride for nuclear radiation detectors", Nucl. Instr. and Meth. A322 (1992) pp.313-323.