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Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

CoSi 2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

(3) Lim, C W a Greene, J E a Petrov, I a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-ENERGY ION IRRADIATION; NUMBER DENSITY; REACTIVE DEPOSITION EPITAXY; VOLMER-WEBER MODE;

COBALT COMPOUNDS; DEPOSITION; EPITAXIAL GROWTH; IONS; IRRADIATION; MAGNETRON SPUTTERING; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FILM GROWTH;

EID: 33746216148 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2213351 Document Type: Article

Times cited : (4)

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