Leakage current characteristics of Pt/Bi4-xLaxTi 3O12/Ru ferroelectric capacitiors fabricated on metal-organic chemical vapor deposited Ru films

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Furukawa, Taisuke ^a   Kuroiwa, Takeharu ^a   Sato, Takehiko ^a   Fujisaki, Yoshihisa ^b   Ishiwara, Hiroshi ^c  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b HITACHI LTD   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; FERROELECTRIC DEVICES; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM COMPOUNDS; THIN FILMS;

DEPOSITION TEMPERATURE DEPENDENCE; FERROELECTRIC CAPACITORS; LEAKAGE CURRENT DENSITY; POSTANNEALING TEMPERATURE DEPENDENCE;

CAPACITORS;

EID: 33746191663     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213350     Document Type: Article

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