Leakage current suppression of Pt/Bi4-xLaxTi 3O12/Ru capacitors by post-annealing of Ru films

Integrated Ferroelectrics

Volumn 62, Issue , 2004, Pages 171-176

  Furukawa, T ^a   Kuroiwa, T ^a   Fujisaki, Y ^a,b   Sato, T ^a   Ishiwara, H ^b  

^a R&D Association for Future Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

BLT; Bottom electrode; Ferroelectric capacitor; Leakage current density; MOCVD; Post annealing; Ruthenium

Indexed keywords

ANNEALING; DEPOSITION; FERROELECTRIC DEVICES; LEAKAGE CURRENTS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHENIUM; VACUUM;

BOTTOM ELECTRODES; FERROELECTRIC CAPACITORS; LEAKAGE CURRENT DENSITY; POST-ANNEALING;

CAPACITORS;

EID: 20444472411     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490456704     Document Type: Article

References (5)

1. T. Kawahara, M. Yamamuka, A. Yuuki, and K. Ono, Jpn. J. Appl. Phys. 35, 4880 (1996).
2. T. Sato, K. Sugahara, and H. Ishiwara, Integrated Ferroelectrics 39, 169 (2001).
3. T. Sato, K. Kuroiwa, K. Sugahara, and H. Ishiwara, Jpn. J. Appl. Phys. 41, 2105 (2002).
4. T. Furukawa, K. Kuroiwa, Y. Fujisaki, T. Sato, and H. Ishiwara, Proceedings of International Symposium on Integrated Ferroelectrics (ISIF 2003), 8.2.2-C (2003).
5. T. Furukawa, K. Kuroiwa, Y. Fujisaki, T. Sato, and H. Ishiwara, Integrated Ferroelectrics, to be published.