Chemical vapor deposition of Ru bottom electrode for ferroelectric Bi 4-xlaxTi3O12 Capacitors

Integrated Ferroelectrics

Volumn 59, Issue , 2003, Pages 1437-1443

  Furukawa, Taisuke ^a   Kuroiwa, Takeharu ^a   Fujisaki, Yoshihisa ^a,b   Sato, Takehiko ^a   Ishiwara, Hiroshi ^b  

^a R&D Association for Future Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

BLT; Ferroelectric capacitor; Leakage current density; MOCVD; Ruthenium; bottom electrode

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; CURRENT DENSITY; DEPOSITION; ELECTROCHEMICAL ELECTRODES; FERROELECTRIC CERAMICS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHENIUM;

BLT; FERROELECTRIC CAPACITOR; RUTHENIUM BOTTOM ELECTRODE; RUTHENIUM FILMS;

FERROELECTRIC DEVICES;

EID: 2942689380     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390259902     Document Type: Article

References (3)

1. T. Sato, K. Sugahara, T. Kijima, and H. Ishiwara, Integrated Ferroelectrics 39, 169 (2001).
2. T. Sato, T. Kuroiwa, K. Sugahara, and H. Ishiwara, Jpn. J. Appl. Phys. 41, 2105 (2002).
3. T. Sato, T. Kuroiwa, and H. Ishiwara, Extended Abstract of 1st International Meeting on Ferroelectric Random Access Memories 168 (2001).