Stress dependence on N/Ga ratio in GaN epitaxial films grown on ZnO substrates

Current Applied Physics

Volumn 4, Issue 6, 2004, Pages 685-687

  Minegishi, Tsutomu ^a   Suzuki, Takuma ^a   Harada, Chihiro ^a   Goto, Hiroki ^a   Cho, Meoung Whan ^b   Yao, Takafumi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

GaN; Heterointerface; Molecular beam epitaxy; XRD; ZnO

Indexed keywords

EID: 5144223789     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2004.01.040     Document Type: Article

References (4)

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