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Volumn 47, Issue 6, 2005, Pages 1006-1009

Photoluminescence studies of GaN films on Si(111) substrate by using an AIN buffer control

Author keywords

AlN buffer; Crack; Metalorganic chemical vapor deposition; Silicon (111); Stress

Indexed keywords


EID: 30344453363     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (9)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.