Al-based contacts on Ga-face and N-face n-GaN wafer grown by using hydride vapor phase epitaxy

Journal of the Korean Physical Society

Volumn 48, Issue 6, 2006, Pages 1259-1263

  Kwak, Joon Seop ^a   Cho, Jaehee ^b   Sone, Cheolsoo ^b  

^a Sunchon National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

InGaN; LED; Ohmic contact; Ti Al

Indexed keywords

EID: 33746044876     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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