High-power low vertical beam divergence 800-nm-band double-barrier-SCH GaAsP-(AlGa)As laser diodes

IEEE Photonics Technology Letters

Volumn 18, Issue 15, 2006, Pages 1582-1584

  Mala̧g, Andrzej ^a   Jasik, Agata ^a   Teodorczyk, Marian ^a   Jagoda, Andrzej ^a   Kozłowska, Anna ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

AlGaAs GaAsP heterostructure; High power lasers; Laser beam divergence; Laser diodes (LDs); Optical planar waveguides; Power conversion efficiency (pce)

Indexed keywords

HETEROJUNCTIONS; LASER BEAMS; OPTICAL DESIGN; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM COMPOUNDS;

HIGH-POWER LASERS; LASER BEAM DIVERGENCE; OPTICAL PLANAR WAVEGUIDES; POWER CONVERSION EFFICIENCY (PCE); SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH);

SEMICONDUCTOR LASERS;

EID: 33745953541     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.878142     Document Type: Article

References (13)

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