Effects of broad-waveguide structure in 0.8 μm high-power InGaAsP/InGaP/AlGaAs lasers

Applied Physics Letters

Volumn 75, Issue 13, 1999, Pages 1839-1841

  Hayakawa, T ^a   Wada, M ^a   Yamanaka, F ^a   Asano, H ^a   Kuniyasu, T ^a   Ohgoh, T ^a   Fukunaga, T ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONTINUOUS WAVE LASERS; HETEROJUNCTIONS; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE MEASUREMENT; WAVEGUIDES;

OPTICAL CONFINEMENT FACTOR; SEPARATE-CONFINEMENT-HETEROSTRUCTURE (SCH) LASERS;

HIGH POWER LASERS;

EID: 0032621417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124845     Document Type: Article

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