High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

Applied Physics Letters

Volumn 70, Issue 2, 1997, Pages 149-151

  Wade, J K ^a   Mawst, L J ^a   Botez, D ^a   Jansen, M ^a   Fang, F ^a   Nabiev, R F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CONTINUOUS WAVE LASERS; CRYSTAL STRUCTURE; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS;

CATASTROPHIC OPTICAL MIRROR DAMAGE; ELECTRON BLOCKING LAYERS; ELECTRON LEAKAGE; WALLPLUG EFFICIENCY;

SEMICONDUCTOR LASERS;

EID: 0030784095     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118343     Document Type: Article

References (16)