Modeling and design of the high performance step SOI-LIGBT power devices by partition mid-point method

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1693-1698

  Chang, Fang Long ^a,c   Lin, Ming Jang ^a   Lee, Gwo Yann ^a   Chen, Young Shying ^b   Liaw, C W ^c   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Linearly graded doping; SOI LIGBT; Step drift doping profile

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; IONIZATION; SEMICONDUCTOR DOPING;

LINEARLY GRADED DOPING;

SOLID STATE DEVICES;

EID: 0043095328     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00143-6     Document Type: Conference Paper

References (8)

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