A new 2-D analytical model of double RESURF in SOI high voltage devices

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 328-331

  Li, Zhaoji ^a   Guo, Yufeng ^a   Zhang, Bo ^a   Fang, Jian ^a   Li, Zehong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Double RESURF; Model; SOI

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; MOS DEVICES; OPTIMIZATION; PERMITTIVITY; POISSON EQUATION;

DOPING CONCENTRATION; DOPING OPTIMAL REGION (DOR); REDUCE SURFACE FIELD (RESURF); SILICON DEVICES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 21644459943     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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