Step drift doping profile for high voltage DI lateral power devices

IEEE International SOI Conference

Volumn , Issue , 1995, Pages 139-140

  Sunkavalli, Ravishankar ^a   Tamba, Akihiro ^a   Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; LITHOGRAPHY; MASKS; POWER ELECTRONICS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

BURIED OXIDE THICKNESS; EPITAXIAL LAYER THICKNESS; LATERAL POWER DEVICES; STEP DRIFT DOPING PROFILE; UNIFORM ELECTRIC FIELD DISTRIBUTION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0029536592     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)