Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 1036-1041

  Zhang, Shengdong ^a   Sin, Johnny K O ^a   Lai, Tommy M L ^a   Ko, Ping K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; MATHEMATICAL MODELS; MOSFET DEVICES; POWER INTEGRATED CIRCUITS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

POWER TRANSISTORS;

THIN FILM DEVICES;

EID: 0032686879     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760414     Document Type: Article

References (12)

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