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Volumn 130-131, Issue SPEC. ISS., 2006, Pages 403-410

Characterization and strain gradient optimization of PECVD poly-SiGe layers for MEMS applications

Author keywords

Hydrogen dilution; Microcrystalline; Multi layer; PECVD; Poly SiGe; Strain gradient

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; MECHANICAL PROPERTIES; MICROELECTROMECHANICAL DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILANES;

EID: 33745872532     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.12.048     Document Type: Article
Times cited : (27)

References (15)
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    • Howe, R.T.1    King, T.J.2
  • 4
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    • The novel use of low temperature hydrogenated microcrystalline silicon germanium for MEMS applications
    • Gromova M., Baert K., Van Hoof C., Mehta A., and Witvrouw A. The novel use of low temperature hydrogenated microcrystalline silicon germanium for MEMS applications. Microelectron. Eng. 76 (2004) 266-271
    • (2004) Microelectron. Eng. , vol.76 , pp. 266-271
    • Gromova, M.1    Baert, K.2    Van Hoof, C.3    Mehta, A.4    Witvrouw, A.5
  • 7
    • 0000237780 scopus 로고    scopus 로고
    • Effect of in situ boron doping on properties of SiGe films deposited by chemical vapor deposition at 400 °C
    • Sedky S., Witvrouw A., Saerens A., Van Houtte P., Portmans J., and Baert K. Effect of in situ boron doping on properties of SiGe films deposited by chemical vapor deposition at 400 °C. J. Mater. Res. 16 9 (2001) 2607-2612
    • (2001) J. Mater. Res. , vol.16 , Issue.9 , pp. 2607-2612
    • Sedky, S.1    Witvrouw, A.2    Saerens, A.3    Van Houtte, P.4    Portmans, J.5    Baert, K.6
  • 9
    • 0001159123 scopus 로고    scopus 로고
    • Hydrogenated microcrystalline silicon germanium: a bottom cell material for amourphous silicon-based tandem solar cells
    • Ganguly G., Ikeda T., Nishimiya T., Saitoh K., Kondo M., and Matsuda A. Hydrogenated microcrystalline silicon germanium: a bottom cell material for amourphous silicon-based tandem solar cells. Appl. Phys. Lett. 69 27 (1996) 4224-4226
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.27 , pp. 4224-4226
    • Ganguly, G.1    Ikeda, T.2    Nishimiya, T.3    Saitoh, K.4    Kondo, M.5    Matsuda, A.6
  • 10
    • 0034469351 scopus 로고    scopus 로고
    • A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the multipoly process
    • Yang J., Kahn H., He A.-Q., Phillips S.M., and Heuer A.H. A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the multipoly process. J. Microelectromech. Syst. 9 4 (2000) 485-494
    • (2000) J. Microelectromech. Syst. , vol.9 , Issue.4 , pp. 485-494
    • Yang, J.1    Kahn, H.2    He, A.-Q.3    Phillips, S.M.4    Heuer, A.H.5
  • 13
    • 2142806966 scopus 로고    scopus 로고
    • Effect of deposition parameters on the stress gradient of CVD and PECVD poly-SiGe for MEMS applications
    • Van der Donck T., Proost J., Rusu C., Baert K., Van Hoof C., Celis J.-P., and Witvrouw A. Effect of deposition parameters on the stress gradient of CVD and PECVD poly-SiGe for MEMS applications. Proc. SPIE 5342 (2004) 8-18
    • (2004) Proc. SPIE , vol.5342 , pp. 8-18
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  • 14
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    • Determination of stress profile and optimization of stress gradient in PECVD poly-SiGe films
    • Molfese A., Mehta A., and Witvrouw A. Determination of stress profile and optimization of stress gradient in PECVD poly-SiGe films. Sens. Actuators: Phys. 118 2 (2005) 313-321
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.