The novel use of low temperature hydrogenated microcrystalline silicon germanium (μcSiGe:H) for MEMS applications

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 266-271

  Gromova, M ^a,b   Baert, K ^a   Van Hoof, C ^a,b   Mehta, A ^a   Witvrouw, A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Growth mechanism; Low temperature processing; Microcrystalline; Microelectromechanical systems; PECVD; SiGe; Stress

Indexed keywords

CMOS INTEGRATED CIRCUITS; HYDROGENATION; LOW TEMPERATURE OPERATIONS; MICROMACHINING; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

GROWTH MECHANISMS; LOW TEMPERATURE PROCESSING; MICROCRYSTALLINE SIGE;

MICROELECTROMECHANICAL DEVICES;

EID: 4544330328     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.042     Document Type: Conference Paper

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