Effect of hot-wire passivation on the properties of hydrogenated microcrystalline silicon films to reduce post-deposition oxidation

Journal of Non-Crystalline Solids

Volumn 352, Issue 28-29, 2006, Pages 2943-2946

  Mitsuhashi, S ^a   Tabata, A ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; FT IR measurements; Microcrystallinity; Oxidation reduction; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN BOUNDARIES; HYDROCARBONS; HYDROGENATION; METHANE; OXIDATION; SILICON; THERMAL EFFECTS;

FT-IR MEASUREMENTS; METHANE-RELATED RADICALS; MICROCRYSTALLINITY; OXIDATION REDUCTION;

THIN FILMS;

EID: 33745866922     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.04.020     Document Type: Article

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