Breaking the theoretical limit of SiC unipolar power device - A simulation study

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1062-1072

  Yu, L C ^a   Sheng, K ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

Breakdown voltage; Charge imbalance; SiC; Specific on resistance; Super junction

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

CHARGE IMBALANCE; SPECIFIC ON-RESISTANCE; SUPER-JUNCTIONS;

ELECTRONIC EQUIPMENT;

EID: 33745820878     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.038     Document Type: Article

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