SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 887-890

  Adachi, K ^a   Omura, I ^b   Ono, R ^c   Nishio, J ^c   Shinohe, T ^b   Ohashi, H ^b   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c NONE

Author keywords

4H SiC; Device; Floating Junction; Simulation; Super Junction

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; COMPUTER AIDED LOGIC DESIGN; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; FABRICATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

FLOATING JUNCTIONS;

SCHOTTKY BARRIER DIODES;

EID: 0242496492     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.887     Document Type: Conference Paper

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