Comparison of super-junction structures in 4H-SiC and Si for high voltage applications

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 719-722

  Adachi, K ^a,c   Johnson, C M ^c   Ohashi, H ^d   Shinohe, T ^a,d   Kinoshita, K ^d   Arai, K ^a,b  

^a Ultra Low Loss Pwr Device TRB   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ENERGY GAP; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON CARBIDE;

ELECTRIC FIELD DISTRIBUTION; HIGH VOLTAGE APPLICATIONS; PILLAR CHARGE IMBALANCE; SUPER JUNCTION STRUCTURES;

SEMICONDUCTOR JUNCTIONS;

EID: 0035126746     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.719     Document Type: Article

References (4)

1. T. Fujihara, Japan. J. Appl. Phys., 36 (1997), p. 6254.
2. L. Lorenz, G. Deboy, A. Knapp, M. Maerz, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (1999), p. 3.
3. P.M. Shenoy, A. Bhalla, G.M. Dolny, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (1999), p. 99.
4. Y. Kawaguchi, K. Nakamura, A. Yahata, A. Nakagawa, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (1999), p. 95.