Multistep junction termination extension for SiC power devices

Electronics Letters

Volumn 37, Issue 6, 2001, Pages 392-393

  Li, X ^a   Tone, K ^a   Fursin, L ^a   Zhao, J H ^a   Burke, T ^b   Alexandrov, P ^a   Pan, M ^c   Weiner, M ^c  

^a RUTGERS UNIVERSITY   (United States)

^b US Army Tank Automotive Command   (United States)

^c UNITED SILICON CARBIDE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DRY ETCHING; ION IMPLANTATION; SEMICONDUCTOR DIODES; SILICON CARBIDE;

HIGH POWER DEVICES; MULTISTEP JUNCTION TERMINATION EXTENSION;

POWER ELECTRONICS;

EID: 0035868158     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010258     Document Type: Article

References (2)

1. Diamond, SiC and nitride wide-bandgap semiconductors
2. Periphery protection for silicon carbide devices: State of the art and simulation