Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 929-934

  Ioannou, D P ^a   Mishra, R ^a   Ioannou, D E ^a   Liu, S T ^b   Hughes, H L ^c  

^a Krasnow Institute for Advanced Study   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

HCI; NBTI; p Channel MOSFET; Self heating effect; SOI

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; INTERFACES (COMPUTER);

NBTI; P-CHANNEL MOSFET; SELF-HEATING EFFECT;

MOSFET DEVICES;

EID: 33745761910     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.048     Document Type: Article

References (13)

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