The interaction of hot electrons and hot holes on the degradation of P-channel metal oxide semiconductor field effect transistors

ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems

Volumn , Issue , 2002, Pages

  Yang, Z J ^a   Guarin, F J ^a   Rauch, S E ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; FIELD EFFECT TRANSISTORS;

ACCELERATED STRESS; CO-EXISTENCE REGIME; DEFECT GENERATION; DEGRADATION CONDITION; HOT CARRIER DEGRADATION; INTERACTION MECHANISMS; STRESS CONDITION; TRAP GENERATION RATE;

HOT ELECTRONS;

EID: 84900300680     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCDCS.2002.1004038     Document Type: Conference Paper

References (11)

1. C. Hu, Proc. of the IEEE, 81,682 (1 993)
2. S. Rauch, F. Guarin, G. LaRosa, IEEE Electron Device Lett. 19,463 (1 998)
3. D.J. DiMaria, E. Cartier, and D. Arnold , J.Appl. Phys., 73,3367 (1993)
4. B.S. Doyle, and K. R. Mistry, IEEE trans. Electron Devices, 37, 1301(1990)
5. T. Tsuchiya, Y. Okazaki, M. Miyake, and T. Kobayashi, IEEE Trans. Electron Devices, 39,404( 1992)
6. R. Woltjer and G. M. Paulzen, IEEE trans. Electron Devices, 41,1639( 1994)
7. L.K. Han, S. Biesemans, J. Heidenreich, K. Houlihan, C. Lin, V. Mcgrahay, T. Schiml, A, Schmidt, U.P. Schroeder, M. Stetter, C. Wann, D. Wamer, R. Mahnkopf, B. Chen, Dig. Of VLSI Tech. Papers
8. I.C. Chen, S. Holland, and C. Hu, J.App1. Phys. 61, 4544 (1987)
9. W. Weber, M. Brox, R. Thewes, and N. S. Saks, IEEE trans. Electron Devices, 42,l473( 1995)
10. J.F. Zhang, S. Taylor, and W. Eccleston, J. Appl. Phys. 71,5989 (1992)
11. S. Ogawa, W. Shimaya, and N. Shiono, J. Appl. Phys., 77, 1137(1995)