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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 1, 2002, Pages 256-262

Three-dimensional strain relaxation in the As/Si (001)-(2 × 1) surface

(2) Tanaka, Yu a,b Hashizume, Hiroo a,c

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

c NARA INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

As Si(001) (2 1) surface; Keating model; Reconstruction; Surface relaxation; Surface X ray diffraction; Synchrotron radiation

Indexed keywords

ABSORPTION; ACTIVATION ENERGY; ARSENIC; DESORPTION; RELAXATION PROCESSES; SILICON; SUBSTRATES; THERMOANALYSIS; X RAY DIFFRACTION;

ELASTIC-ENERGY CALCULATIONS; STRAIN RELAXATION;

SURFACE CHEMISTRY;

EID: 0036309790 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.41.256 Document Type: Article

Times cited : (2)

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