Formation of tungsten silicide films by ion beam synthesis

Surface and Coatings Technology

Volumn 140, Issue 2, 2001, Pages 116-121

  Liang, J H ^a   Chao, D S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Cross sectional transmission electron microscopy; Ion beam synthesis; Ion implantation; Rutherford backscattering spectroscopy; Secondary ion mass spectroscopy; Tungsten silicide; X ray diffraction

Indexed keywords

ANNEALING; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; ION BEAMS; ION IMPLANTATION; OPTICAL CORRELATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY;

PROTECTIVE COATINGS;

FILM THICKNESS; INORGANIC COATING; ION IMPLANTATION;

EID: 0035972799     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(01)01034-9     Document Type: Article

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