SCOPUS 정보 검색 플랫폼

Vacuum

Volumn 64, Issue 3-4, 2002, Pages 227-232

The deposition and characterisation of CVD tungsten silicide for applications in microelectronics

(3) Bain, M F a Armstrong, B M a Gamble, H S a

a QUEEN'S UNIVERSITY BELFAST (United Kingdom)

Author keywords

Annealing; Characterisation; CVD; Silicon rich WSi

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; GRAIN GROWTH; RAPID THERMAL ANNEALING; REFLECTION; SILICON; STRESS ANALYSIS; SUBSTRATES; SURFACE ROUGHNESS;

FURNACE ANNEALING; TUNGSTEN SILICIDE;

TUNGSTEN COMPOUNDS;

EID: 0036136188 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/S0042-207X(01)00315-3 Document Type: Article

Times cited : (11)

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3
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5
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6
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- New York: Academic Press
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- Maruka, S.P.¹

7
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8
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9
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- Maruka, S.P.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.