Bendability of single-crystal Si MOSFETs investigated on flexible substrate

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 538-541

  Li, H Y ^a   Guo, L H ^a   Loh, W Y ^a   Bera, L K ^a   Zhang, Q X ^a   Hwang, N ^a   Liao, E B ^a   Teoh, K W ^a   Chua, H M ^a   Shen, Z X ^b   Cheng, C K ^a   Lo, G Q ^a   Balasubramanian, N ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Fatigue characteristics; Mechanical bendability; MOSFET

Indexed keywords

FATIGUE OF MATERIALS; FORMABILITY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES;

DEVICE LAYER TRANSFER; FLEXIBLE SUBSTRATE; GRINDING BACKSIDE; THERMAL BONDING;

MOSFET DEVICES;

EID: 33745677717     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.876301     Document Type: Article

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