Vertical profile design and transit time analysis of nano-scale SiGe HBTs for terahertz fT

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 213-216

  Shi, Yun ^a   Niu, Guofu ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; DIFFUSION; DOPING (ADDITIVES); ELECTRIC FIELDS; METALLURGY; OPTICAL COMMUNICATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

BANDGAP NARROWING (BGN); FILM STABILITY; METALLURGICAL JUNCTIONS; TRANSIT TIME ANALYSIS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 17044380681     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. D. Greenberg et al., IEDM. p. 495, 2001.
2. M. Meghelli et al., IEEE Journal of Solid-State Circuits, vol. 37, p. 1106, 2002.
3. J.-S. Rieh et al., IEDM, p. 771, 2002.
4. J. Slotboom, keynote speech, BCTM 2003.
5. Y. Shi et al., IEEE Trans. on Electron Devices, vol. 50, p. 1370, 2003.
6. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998.
7. J. D. Cressler and G. F. Niu, Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, 2002.
8. J. J. H. Van Den Biesen, Solid-State Electronics, vol. 29, p. 529, 1986.
9. J. N. Burghartz et al., IEEE BCTM, p. 55, 1993.
10. L. C. M. van den Oever et al., IEEE BCTM, p. 78, 2001.
11. L. C. M. van den Oever et al., Proceedings of the SAFT/IEEE workshop, p. 119, 2000.